Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps

Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information . Send comments regarding this burden estimate or any other aspect of this collection of information, inclu...

A novel SiC MESFET with recessed P-Buffer layer

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...